SGM0410 3.5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 3-nov-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of -c specifies halogen & lead-free description the SGM0410 provide the designer with the b est combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-89 pa ckage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous draincurrent 3 @ v gs =5v, t a =25c i d 3.5 a v gs =5v, t a =70c 2.2 a pulsed drain current 1,2 i dm 10 a power dissipation t a =25c p d 2 w linear derating factor 0.016 w / c operating junction & storage temperature t j , t stg -55~150 c thermal resistance rating thermal resistance junction-ambient 3 (max). r ja 62.5 c / w sot-89 ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52 0410 = date code 1 g 3 s d 24
SGM0410 3.5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 3-nov-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =1ma gate threshold voltage v gs(th) 1 - 2.5 v v ds =10v, i d =1ma forward transconductance gfs - 4 - s v ds =10v, i d =2.5a gate-source leakage current i gss - - 100 na v gs =20v drain-source leakage current i dss - - 10 a v ds =100v, v gs =0 static drain-source on-resistance r ds(on) - - 170 m v gs =10v, i d =2.6a - - 200 v gs =5v, i d =1.7a total gate charge 2 q g - 11.2 - nc i d =3.5a v ds =80v v gs =5v gate-source charge q gs - 4.4 - gate-drain (miller) charge q gd - 3 - turn-on delay time 2 t d(on) - 9 - ns v dd =30v i d =1a v gs =10v r g =6 r d =30 rise time t r - 9.4 - turn-off delay time t d(off) - 26.8 - fall time t f - 2.6 - input capacitance c iss - 975 - pf v gs =0 v ds =25v f=1.0 mhz output capacitance c oss - 38 - reverse transfer capacitance c rss - 27 - source-drain diode forward on voltage 2 v sd - - 1.5 v i s =3.5a, v gs =0 notes: 1. pulse width limited by max. junction temperatur e. 2. pulse test. 3. surface mounted on 1 in 2 copper pad of fr4 board;135c /w when mounted on mi n. copper pad.
SGM0410 3.5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 3-nov-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SGM0410 3.5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 3-nov-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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